一步溶液法制备有机-无机杂化钙钛矿薄膜
发布时间：2018-09-01 12:22
【摘要】：有机-无机杂化钙钛矿薄膜作为太阳电池的光吸收层,其薄膜的形貌、结构以及结晶程度等因素对电池的光电转换效率起到了决定性的作用,而薄膜的质量主要取决于制备工艺。采用一步溶液法制备了有机-无机杂化钙钛矿(CH_3NH_3PbI_3)薄膜,主要分析了在氟掺杂氧化锡(FTO)导电玻璃、玻璃和多晶硅3种不同衬底上生长CH_3NH_3PbI_3薄膜的形貌和结构的差异。结果表明,在FTO导电玻璃和玻璃衬底上生长的薄膜的晶粒尺寸和晶粒分布均匀,而在硅衬底上生长的薄膜的边缘晶粒尺寸大于中心处的晶粒,并详细分析了造成这种现象的原因。此外,在50℃的低温下对在FTO导电玻璃衬底生长的CH_3NH_3PbI_3薄膜进行了不同时间的退火处理。实验结果表明,随着热处理时间的增加,晶粒尺寸也增加,但是合成的CH_3NH_3PbI_3薄膜部分发生了分解。
[Abstract]:Organic-inorganic hybrid perovskite film is the photoabsorption layer of solar cells. The morphology, structure and degree of crystallization of the film play a decisive role in the photovoltaic conversion efficiency. The quality of the film mainly depends on the preparation process. Organic-inorganic hybrid perovskite (CH_3NH_3PbI_3) thin films were prepared by one-step solution method. The morphology and structure of CH_3NH_3PbI_3 thin films grown on fluorine-doped tin oxide (FTO) conductive glass, glass and polysilicon substrates were analyzed. The results show that the grain size and grain distribution of the films grown on FTO conductive glass and glass substrates are uniform, while the grain size at the edge of the films grown on silicon substrates is larger than that at the center. The causes of this phenomenon are analyzed in detail. In addition, CH_3NH_3PbI_3 thin films grown on FTO conductive glass substrates were annealed at 50 鈩，
本文编号：2217190
[Abstract]:Organic-inorganic hybrid perovskite film is the photoabsorption layer of solar cells. The morphology, structure and degree of crystallization of the film play a decisive role in the photovoltaic conversion efficiency. The quality of the film mainly depends on the preparation process. Organic-inorganic hybrid perovskite (CH_3NH_3PbI_3) thin films were prepared by one-step solution method. The morphology and structure of CH_3NH_3PbI_3 thin films grown on fluorine-doped tin oxide (FTO) conductive glass, glass and polysilicon substrates were analyzed. The results show that the grain size and grain distribution of the films grown on FTO conductive glass and glass substrates are uniform, while the grain size at the edge of the films grown on silicon substrates is larger than that at the center. The causes of this phenomenon are analyzed in detail. In addition, CH_3NH_3PbI_3 thin films grown on FTO conductive glass substrates were annealed at 50 鈩，
本文编号：2217190
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