磁控溅射四元靶材法制备17.5%效率CIGS电池研究

发布时间：2018-11-05 11:09

【摘要】：使用磁控溅射铜铟镓硒(CuIn_(1-x) Ga_xSe_2,CIGS)四元靶材制备沉积态预制膜,重点研究硒化时硒化氢(H_2Se)浓度对吸收层晶粒尺寸以及电池性能的影响。研究表明,当H_2Se浓度从1%提高到5%时,随着H_2Se浓度的升高,吸收层晶粒尺寸增大,减少作为载流子复合中心的晶界缺陷,有利于提高电池开路电压和短路电流,最终提高电池效率。H_2Se浓度从5%进一步提高到10%时,虽然晶粒尺寸进一步增加,但是表面镓含量下降导致表面禁带宽度降低,电池开路电压没有进一步提高。通过先硒化后硫化热处理工艺,可得到表面和底部禁带宽度高于吸收层内部的U型能带结构。硫化处理后,电池平均开路电压从539 mV提高至619 mV,电池平均效率从14.1%提高至15.9%。在制备减反层MgF_2后,获得最高效率为17.5%的电池。
[Abstract]:The deposited prefabricated films were prepared by magnetron sputtering CuIn_ _ (1-x) Ga_xSe_2,CIGS quaternary target. The effects of H_2Se concentration on the crystal size of the absorption layer and the performance of the battery were studied. The results show that when the concentration of H_2Se is increased from 1% to 5%, with the increase of H_2Se concentration, the grain size of the absorption layer increases, and the grain boundary defects as the carrier recombination center are reduced, which is beneficial to increase the open circuit voltage and short circuit current of the battery. When the concentration of H_2Se increased from 5% to 10%, the grain size increased further, but the decrease of the surface gallium content led to the decrease of the surface bandgap, and the open circuit voltage of the cell did not increase further. Through the process of first selenization and later sulfidation heat treatment, the band gap of the surface and bottom is higher than that of the absorption layer. After vulcanization, the average open circuit voltage of the battery increased from 539 mV to 619 mV, the average efficiency of the battery increased from 14. 1% to 15. 9%. After the preparation of antireflective layer MgF_2, the highest efficiency of 17.5% of the battery was obtained.
【作者单位】：清华大学材料学院先进成形制造教育部重点实验室;北京四方创能光电科技有限公司;
【分类号】：TM914.4

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