溶胶—凝胶法制备铜、锂、银掺杂氧化锌薄膜及表征
发布时间：2018-11-05 14:45
【摘要】：ZnO是一种具有光电、气敏、压电等特性优良的多功能材料,它在室温下具有较高的禁带宽度和激子束缚能,在可见光范围内具有很好的透光性,在透明电极、发光器件、太阳能电池、气敏传感器等方面具有潜在的应用价值。多年来一直受到物理、化学、材料、电子等领域的格外关注。 本文采用溶胶凝胶法在Si、ITO和普通玻璃衬底上,制备了未掺杂ZnO薄膜,Cu、 Li、Ag单掺杂ZnO薄膜及Cu与Li和Ag与Li共掺杂ZnO薄膜。通过X射线衍射仪、扫描电子显微镜、透射电子显微镜、紫外可见光分光光度计、电化学工作站等分析仪器,研究了溶胶浓度、掺杂量、退火温度等对ZnO和掺杂ZnO薄膜结晶质量、表面形貌、光透过性、导电性等方面的影响。论文主要内容如下： 首先,我们研究了未掺杂锌溶胶浓度对ZnO薄膜结构、形貌和光电特性的影响,结果表明当溶胶浓度为0.8mol/L时,未掺杂ZnO薄膜获得了较好的光电性能。在此基础上,我们分别制备了不同掺杂浓度的Cu、Li、Ag单掺杂ZnO薄膜,并研究了掺杂量、退火温度等参数对ZnO薄膜光电性能的影响,结果表明经550℃大气退火2h, Cu、 Li、Ag的掺杂量分别为0.001at%,3at%,7at%时,单掺杂ZnO薄膜获得了较好的光电性能,与未掺杂ZnO薄膜相比,其导电性分别提高了约40倍、200倍和250倍,在可见光范围内其透光率分别达80%,95%,90%以上。 其次,在综合性能较好的单掺杂ZnO薄膜基础上,我们分别制备Cu与Li共掺杂和Ag与Li共掺杂ZnO薄膜,研究了Cu与Li和Ag与Li不同摩尔比掺杂量对共掺杂ZnO薄膜综合特性的影响。结果表明经550℃大气退火2h,Cu与Li、Ag与Li、Li与Ag摩尔比均为1：20时,共掺杂ZnO薄膜获得较好的光电性能,与未掺杂ZnO薄膜相比,其导电性分别提高了6倍、150倍、300倍,在可见光范围内其透光率分别达85%,95%,90%以上。此外,本文还研究了不同掺杂源、不同基片及薄膜厚度等因素对薄膜结构、形貌及光电特性的影响,并对相应单掺杂、共掺杂ZnO纳米颗粒进行了研究。
[Abstract]:ZnO is a kind of multifunctional material with excellent photoelectric, gas sensitive, piezoelectric and other properties. It has high band gap and exciton binding energy at room temperature, good transmittance in visible light range, transparent electrode, luminescent device, etc. Solar cells, gas sensors and so on have potential application value. For many years, it has been paid special attention in physics, chemistry, materials, electronics and so on. In this paper, undoped ZnO films, Cu, Li,Ag mono-doped ZnO thin films, Cu and Li and Ag and Li co-doped ZnO films were prepared on Si,ITO and ordinary glass substrates by sol-gel method. By means of X-ray diffractometer, scanning electron microscope, transmission electron microscope, UV-Vis spectrophotometer and electrochemical workstation, the sol concentration and doping amount were studied. The effects of annealing temperature on the crystalline quality, surface morphology, optical transmittance and conductivity of ZnO and doped ZnO thin films were investigated. The main contents of the thesis are as follows: firstly, we study the effect of undoped zinc sol concentration on the structure, morphology and optoelectronic properties of ZnO films. The results show that when the sol concentration is 0.8mol/L, The undoped ZnO thin films have good optoelectronic properties. On this basis, we have prepared Cu,Li,Ag mono-doped ZnO thin films with different doping concentrations, and studied the effects of doping amount and annealing temperature on the photoelectric properties of ZnO films. The results show that the Cu, Li, films are annealed at 550 鈩，
本文编号：2312398
[Abstract]:ZnO is a kind of multifunctional material with excellent photoelectric, gas sensitive, piezoelectric and other properties. It has high band gap and exciton binding energy at room temperature, good transmittance in visible light range, transparent electrode, luminescent device, etc. Solar cells, gas sensors and so on have potential application value. For many years, it has been paid special attention in physics, chemistry, materials, electronics and so on. In this paper, undoped ZnO films, Cu, Li,Ag mono-doped ZnO thin films, Cu and Li and Ag and Li co-doped ZnO films were prepared on Si,ITO and ordinary glass substrates by sol-gel method. By means of X-ray diffractometer, scanning electron microscope, transmission electron microscope, UV-Vis spectrophotometer and electrochemical workstation, the sol concentration and doping amount were studied. The effects of annealing temperature on the crystalline quality, surface morphology, optical transmittance and conductivity of ZnO and doped ZnO thin films were investigated. The main contents of the thesis are as follows: firstly, we study the effect of undoped zinc sol concentration on the structure, morphology and optoelectronic properties of ZnO films. The results show that when the sol concentration is 0.8mol/L, The undoped ZnO thin films have good optoelectronic properties. On this basis, we have prepared Cu,Li,Ag mono-doped ZnO thin films with different doping concentrations, and studied the effects of doping amount and annealing temperature on the photoelectric properties of ZnO films. The results show that the Cu, Li, films are annealed at 550 鈩，
本文编号：2312398
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