室温下溅射法制备高迁移率氧化锌薄膜晶体管
发布时间：2019-05-27 20:06
【摘要】：为降低氧化锌薄膜晶体管(ZnO TFT)的工作电压,提高迁移率,采用磁控溅射法在氧化铟锡(ITO)导电玻璃基底上室温下依次沉积NbLaO栅介质层和ZnO半导体有源层,制备出ZnO TFT,对器件的电特性进行了表征。该ZnO TFT呈现出优异的器件性能:当栅电压为5 V、漏源电压为10 V时,器件的饱和漏电流高达2.2 m A;有效场效应饱和迁移率高达107 cm~2/(V·s),是目前所报道的室温下溅射法制备ZnO TFT的最高值,亚阈值摆幅为0.28 V/decade,开关电流比大于107。利用原子力显微镜(AFM)对NbLaO和ZnO薄膜的表面形貌进行了分析,分析了器件的低频噪声特性,对器件呈现高迁移率、低亚阈值摆幅以及迟滞现象的机理进行了讨论。
[Abstract]:In order to reduce the working voltage and improve the mobility of ZnO thin film transistor (ZnO TFT), NbLaO gate dielectric layer and ZnO semiconductor active layer were deposited on indium tin oxide (ITO) conductive glass substrate by magnetron splashing at room temperature. ZnO TFT, was prepared. The electrical characteristics of the device are characterized. The ZnO TFT shows excellent performance: when the gate voltage is 5 V and the leakage source voltage is 10 V, the saturated leakage current of the device is as high as 2.2 Ma. The effective field effect saturation mobility is as high as 107 cm~2/ (V 路s), is the highest value of ZnO TFT prepared by room temperature sputter method at room temperature, the subthreshold swing is 0.28 V 鈮，
本文编号：2486444
[Abstract]:In order to reduce the working voltage and improve the mobility of ZnO thin film transistor (ZnO TFT), NbLaO gate dielectric layer and ZnO semiconductor active layer were deposited on indium tin oxide (ITO) conductive glass substrate by magnetron splashing at room temperature. ZnO TFT, was prepared. The electrical characteristics of the device are characterized. The ZnO TFT shows excellent performance: when the gate voltage is 5 V and the leakage source voltage is 10 V, the saturated leakage current of the device is as high as 2.2 Ma. The effective field effect saturation mobility is as high as 107 cm~2/ (V 路s), is the highest value of ZnO TFT prepared by room temperature sputter method at room temperature, the subthreshold swing is 0.28 V 鈮，
本文编号：2486444
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